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E2Q0029-38-72 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1313
electronic components KGF1313
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-band to the L-band. This device features high efficiency and high output power. The KGF1313 specifications are guaranteed to a fixed matching circuit for 3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 27 dBm), and plastic package, the KGF1313 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital keying cordless phones.
FEATURES
* Specifications guaranteed to a fixed matching circuits for 3.4 V, 1.9 GHz * High output power: 27 dBm (min.) at 1.9 GHz * High efficiency: 50% (typ.) at 1.9 GHz * Low thermal resistance: 23C/W (typ.) * Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.50.1 1.6 +0.15 -0.10 1.50.1
2.50.1 10.2
40.2
0.48 +0.08 -0.05 0.4
+0.08 -0.05
0.390.05 0.4
+0.08 -0.05
Package material Lead frame material Pin treatment Solder plate thickness
Epoxy resin Cu Solder plating 5 mm or more
1.50.1 1.50.1 30.1
(Unit: mm)
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electronic components
KGF1313
MARKING
(1)
P1 XX
PRODUCT TYPE
(2) LOT NUMBER (MUMERICAL or ALPHABETICAL)
(3)
(1) Gate (2) Source (3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
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electronic components
KGF1313
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = Tc = 25C -- -- Unit V V A W C C Min. -- -5.0 -- -- -- -45 Max. 7.0 0.4 2.0 4.5 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = -5 V VGD = -12 V VDS = 7 V, VGS = -5 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 4.0 mA (*1), PIN = 20 dBm (*1), PIN = 20 dBm (*1), PIN = 0 dBm Channel to case Unit mA mA mA A V dBm % dB C/W Min. -- -- -- 1.3 -3.0 27.0 45 -- -- Typ. -- -- -- -- -- 27.5 50 9.5 15 Max. 100 500 1500 -- -2.0 -- -- -- --
*1 Condition: f = 1.9 GHz, VDS = 3.4 V, IDSQ = 200 mA
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electronic components
KGF1313
RF CHARACTERISTICS
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electronic components Typical S Parameters
KGF1313
VDS = 3.4 V, VGS = -1.43 V, IDS = 200 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.929 0.926 0.925 0.923 0.923 0.921 0.919 0.917 0.915 0.913 0.911 0.907 0.903 0.901 0.896 0.894 0.890 0.885 0.882 0.876 0.875 0.870 0.866 0.863 0.858 0.858 -144.45 -151.64 -157.14 -161.46 -165.18 -168.30 -171.07 -173.67 -175.87 -178.12 179.76 177.80 175.91 174.04 172.38 170.48 168.74 167.12 165.38 163.78 162.12 160.47 158.91 157.28 155.62 153.95 4.159 3.643 3.189 2.833 2.543 2.314 2.121 1.959 1.823 1.702 1.602 1.511 1.428 1.361 1.292 1.236 1.180 1.130 1.086 1.043 1.011 0.972 0.942 0.911 0.875 0.856 98.07 93.23 88.93 85.11 81.97 78.72 75.71 72.79 70.07 67.46 64.62 62.17 59.34 56.91 54.42 51.87 49.30 47.08 44.40 42.64 39.67 37.75 35.06 33.01 30.62 28.46 0.030 0.031 0.032 0.033 0.034 0.035 0.036 0.037 0.038 0.040 0.041 0.042 0.043 0.044 0.046 0.047 0.048 0.049 0.051 0.052 0.053 0.054 0.056 0.057 0.059 0.059 29.22 27.84 26.84 26.40 26.26 25.70 25.89 25.53 25.89 25.44 25.55 25.16 24.95 24.92 24.41 24.23 23.93 23.58 23.06 22.40 21.91 21.43 20.25 19.79 18.82 18.59 0.715 0.717 0.720 0.721 0.721 0.719 0.719 0.718 0.716 0.717 0.713 0.714 0.708 0.710 0.704 0.706 0.700 0.702 0.697 0.697 0.692 0.691 0.689 0.687 0.688 0.683 -178.78 179.91 178.56 177.48 176.49 175.41 174.68 173.46 172.74 171.75 170.66 169.82 168.55 167.77 166.73 165.70 164.81 163.51 162.59 161.49 160.22 159.44 158.03 157.02 155.85 154.65
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electronic components Typical S Parameters
KGF1313
VDS = 3.4 V, VGS = -1.43 V, IDS = 200 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
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electronic components Test Circuit and Bias Configuration for KGF1313 at 1.9 GHz
KGF1313
VGS
CF
CB
CB
CF
VDS
RFC IN CC C1
T1
T2
T3
(1) (2)
(3)
T4
T5
T6
RFC OUT CC
f = 1.9 GHz T1: Z0 = 80 W, E = 77 deg T4: Z0 = 30 W, E = 53 deg T2: Z0 = 10 W, E = 18 deg T5: Z0 = 27 W, E = 42 deg T3: Z0 = 30 W, E = 53 deg T6: Z0 = 80 W, E = 43 deg C1 = 0.8 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH
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